A.K Enterprises

The Mitsubishi CM1200E4C-34N is a high-performance IGBT (Insulated Gate Bipolar Transistor) module, designed for use in demanding power electronics applications. Here's a more detailed description:

The FF400R06KE3HOSA1 is a dual half-bridge IGBT (Insulated Gate Bipolar Transistor) module, designed by Infineon Technologies for high-performance power electronics applications. This module is used in various industrial and commercial systems where efficient switching and power control are required. Below are the key specifications and features of this module:

This Semikron IGBT Module with a voltage rating of 240-440V AC, current rating from 6A to 63A, and operating frequency of 50/60 Hz, is designed to efficiently handle power switching in various industrial, commercial, and residential applications. It's commonly used in motor control systems, power inverters, and HVAC systems. The module ensures high efficiency and reliable performance, making it a great solution for efficient power conversion.

The Mitsubishi CM600DY-24A is a dual IGBT module designed for high-performance, high-power applications. With a 600A current rating and 1200V voltage rating, it is ideal for applications such as motor drives, power inverters, welding equipment, and industrial machinery. The CM600DY-24A offers excellent switching performance, low losses, and reliable operation, making it a solid choice for demanding power control systems. If you need more details or help with integration, feel free to ask!

The Infineon Technologies 641-FZ3600R17HP4_B2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module, specifically designed for applications that demand high power handling. Below are the key features and specifications for this module: